A comparison of seven TFTs fabricated on different thin-films reported between 2019 and 2021.
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Mude, Narendra Naik, Ravindra Naik Bukke, Jewel Kumer Saha, Christophe Avis, and Jin Jang. “Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O2 Plasma Treatment". Advanced Electronic Materials 5, no. 12 (September 25, 2019): 1900768. doi:10.1002/aelm.201900768.
Do, Youngbin, Duk Young Jeong, Suhui Lee, Seongbok Kang, Seonhyang Jang, and Jin Jang. “Remarkable Improvement in Foldability of Poly‐Si Thin‐Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Poly‐Si Thin‐Film Transistor Used for Foldable Displays.” Advanced Engineering Materials 22, no. 5 (March 2020): 1901430. doi:10.1002/adem.201901430.
Saha, Jewel Kumer, Ravindra Naik Bukke, and Jin Jang. “Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis.” Advanced Electronic Materials 6, no. 12 (November 5, 2020): 2000594. doi:10.1002/aelm.202000594.
Shang, Z. W., J. Ma, W. D. Liu, Y. C. Fan, H. H. Hsu, Z. W. Zheng, and C. H. Cheng. “Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing.” IEEE Journal of the Electron Devices Society 8 (2020): 485–489. doi:10.1109/jeds.2020.2986172.
Mude, Narendra Naik, Ravindra Naik Bukke, and Jin Jang. “High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O3 Photocuring.” ACS Applied Materials & Interfaces 13, no. 17 (April 23, 2021): 20277–20287. doi:10.1021/acsami.0c21979.
Napari, Mari, Tahmida N. Huq, David J. Meeth, Mikko J. Heikkilä, Kham M. Niang, Han Wang, Tomi Iivonen, et al. “Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors.” ACS Applied Materials & Interfaces 13, no. 3 (January 14, 2021): 4156–4164. doi:10.1021/acsami.0c18915.
Mude, Narendra Naik, Ravindra Naik Bukke, and Jin Jang. “Solution-Processed High-Performance p-Channel Copper Tin Sulfide Thin-Film Transistors.” Journal of Materials Chemistry C 9, no. 29 (2021): 9188–9196. doi:10.1039/d1tc01575c.